Part Number: CST4406A-3 CPC3A-00; Product Name: KYOCERA Industrial Rectifier Module
Brand: KYOCERA (A global leader in advanced electronic components, specializing in high-reliability rectifiers, semiconductors, and industrial electronic devices for automotive, industrial, and energy sectors);
Product Status: Original New Unit; Product Category: Silicon Carbide (SiC) Rectifier Module, designed for high-efficiency power conversion with superior thermal performance and long-term stability.
Core Application: Suitable for industrial power supplies, EV charging stations, on-board chargers (OBC), high-frequency inverters, photovoltaic (PV) systems, and 3kW-11kW power stack designs. Ideal for mission-critical applications requiring high power density and low energy loss.
Core Features: Silicon Carbide (SiC) material construction; High-efficiency power conversion; Excellent thermal conductivity; Compact modular design; Low reverse recovery charge; Compliance with global industrial and automotive standards.
2. Electrical Specifications (Ta = 25℃, Unless Otherwise Specified)
2.1 Power Supply Parameters
Input Voltage: 3-Phase AC 380~480 VAC; Voltage Tolerance: ±10% (342 VAC ~ 528 VAC); Frequency Range: 50/60 Hz ±5%;
Rated Output Current: 20 A (Continuous); Peak Output Current: 60 A (10 second duration); Rated Output Voltage: 650 VDC (SiC Rectification);
Isolation Voltage: 2500 VAC (Between Power Circuit and Housing, Duration 1 min, per IEC 61140 Standard); No-load Power Consumption: ≤ 5 W.
2.2 Rectification Performance Parameters
Rectification Type: Single-Phase/Single-Way SiC Rectifier; Forward Voltage Drop: ≤ 1.8 V (At Rated Current, Ta=25℃);
Reverse Recovery Time (trr): ≤ 50 ns (Typical); Reverse Recovery Charge (Qrr): ≤ 20 μC (Typical, At Rated Voltage);
Maximum Operating Frequency: 100 kHz; Forward Surge Current: 200 A (10 ms Duration, Half-Sine Wave);
Thermal Resistance (Junction to Case): ≤ 0.8 ℃/W; Diode Configuration: Single Diode per Module.
2.3 Protection Parameters
Over-Voltage Protection (OVP): Trigger Threshold ≥ 750 VDC; Over-Current Protection: Built-in Current Limiting (Activates at ≥ 70 A);
Over-Temperature Protection (OTP): Trigger Threshold ≥ 175℃ (Junction Temperature); Reverse Polarity Protection: Built-in Diode Clamping.
