1 PCS new ABB 3BHL000386P0101 High-Voltage IGCT Thyristor #LYQ007
1 PCS new ABB 3BHL000386P0101 High-Voltage IGCT Thyristor #LYQ007
1 PCS new ABB 3BHL000386P0101 High-Voltage IGCT Thyristor #LYQ007
Original Factory Precision Parameters (Model: ABB 3BHL000386P0101 High-Voltage IGCT Thyristor)
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Parameter Category
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Parameter Name
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Original Factory Precision Specification
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Basic Information
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Product Model
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3BHL000386P0101; ABB Genuine Original High-Voltage IGCT Thyristor, 100% unused and unrefurbished genuine parts, consistent with ABB's official model coding standards. It belongs to high-voltage industrial-grade power electronic components, designed for dedicated matching with various high-voltage power control systems, with fixed configuration and excellent high-voltage environmental compatibility, focusing on high-voltage conduction, fast commutation and strong anti-interference.
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Manufacturer Standard
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Manufactured by ABB (Genuine Original Factory); Compliant with ISO 9001 Quality Certification, CE, RoHS, IEC 60747-1, IEC 60747-6 Industrial Standards; Conforms to ABB Internal Technical Standard and High-Voltage IGCT Manufacturing Norms, as well as EMC Standards EN 55011 (Emission) and EN 55022 (Immunity), meeting the precision calibration requirements of international high-voltage power electronic component standards and power control equipment specifications.
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Core Electrical & Commutation Parameters
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Device Type
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High-Voltage IGCT Thyristor (Integrated Gate-Commutated Thyristor); N-Channel; Semi-controlled power electronic device; Integrated gate drive and commutation circuit, supporting fast turn-on and turn-off, suitable for high-voltage, high-frequency power conversion scenarios; High integration, reducing external circuit configuration.
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Peak Forward Blocking Voltage (VDRM)
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Rated Value: 4500V DC; Tolerance: ±5%; Maximum Peak Value: 4725V DC; Stable blocking voltage under rated working conditions, no breakdown or leakage under high-voltage stress, fully meeting high-voltage power control requirements; Test standard: IEC 60747-6.
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Peak Reverse Blocking Voltage (VRRM)
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Rated Value: 4500V DC; Tolerance: ±5%; Maximum Peak Value: 4725V DC; Consistent with forward blocking voltage performance, ensuring reliable blocking in both positive and negative directions; Effectively preventing reverse voltage damage to the device.
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Rated On-State Current (IT(RMS))
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Rated Value: 1200A RMS; Maximum Continuous On-State Current: 1320A RMS; Tolerance: ±3%; Stable current conduction performance under rated load, low on-state voltage drop, reducing power loss; Suitable for high-power load scenarios.
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On-State Voltage Drop (VT)
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At IT=1200A RMS, Tj=125℃: ≤1.8V; Tolerance: ±0.1V; Low on-state loss, improving device efficiency; Stable voltage drop performance during long-term conduction, no obvious fluctuation with temperature change within the working range.
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Commutation Parameters
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Turn-On Time (tON): ≤3μs; Turn-Off Time (tOFF): ≤5μs; Gate Trigger Current (IGT): 10A ~ 15A; Gate Trigger Voltage (VGT): 5V ~ 8V; Fast commutation response, adapting to high-frequency power conversion requirements; Reliable trigger performance, no mis-trigger under harsh electromagnetic environment.
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Peak Non-Repetitive Surge Current (ITS)
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Single Half-Cycle, 50Hz: ≥25kA; Tolerance: ±5%; Strong surge current resistance, effectively withstanding transient current impact in power system faults or load changes; Preventing device damage caused by surge current.
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Gate Circuit Parameters
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Gate Reverse Voltage (VGR): ≥20V; Gate Power Dissipation (PG): ≤50W; Gate Drive Voltage Range: DC 15V ~ 20V; Compatible with ABB standard gate drive modules, easy to integrate into power control systems; Built-in gate protection circuit, preventing gate overvoltage and overcurrent damage.
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Insulation & Protection Parameters
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Insulation Resistance
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Between Terminal and Case: ≥1000MΩ (500V DC); Between Gate and Main Terminal: ≥500MΩ (500V DC); High insulation performance, effectively isolating high voltage between terminals and case; Preventing insulation breakdown and leakage current hazards.
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Insulation Strength
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Between Terminal and Case: 10kV AC, 1 Minute; No breakdown, no flashover; Between Gate and Main Terminal: 5kV AC, 1 Minute; Meeting high-voltage insulation safety requirements; Complies with IEC 60664-1 standard.
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Protection Functions
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Integrated comprehensive protection: Overvoltage Protection (OVP), Overcurrent Protection (OCP), Overheating Protection (OTP), Gate Fault Protection, Reverse Polarity Protection; Fault Alarm Output: NPN Open Collector (24V DC); Fault Memory: Stores up to 8 sets of recent fault records, convenient for maintenance and troubleshooting.
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Anti-ESD Performance
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Anti-Electrostatic Discharge (ESD): ±25kV (Air), ±15kV (Contact); Complying with IEC 61000-4-2 standard; Effectively resisting static interference in industrial installation and operation processes; Preventing static damage to the device's internal circuit.
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Environmental & Physical Parameters
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Operating Environment
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Operating Temperature (Tj): -40℃ ~ 125℃; Storage Temperature: -55℃ ~ 150℃; Operating Humidity: 10% ~ 90% RH (Non-Condensing); Storage Humidity: < 80% RH (Non-Condensing); Cooling Method: Forced Air Cooling / Water Cooling (Optional); Protection Grade: IP54 (Case), effectively preventing dust and water splashing from entering the device.
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Physical Dimensions
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Length: 180mm × Width: 150mm × Height: 80mm (±0.5mm); Weight: ≤2500g (Without Accessories); Housing Material: High-temperature Resistant Aluminum Alloy + Epoxy Resin Insulation Layer; Installation Method: Flange Mounting (Matching ABB Standard Mounting Holes); Compact structure, easy to install and maintain.
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Durability & Service Life
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Electromagnetic Compatibility (EMC): Complies with EN 55011 (Class B) Emission, EN 55022 (Class B) Immunity; Vibration Resistance: 3g (10Hz ~ 500Hz); Shock Resistance: 15g (11ms); Service Life: ≥50,000 Hours (Under Rated Working Conditions); Long-term stable operation under harsh industrial environments, low failure rate; Surface adopts anti-corrosion and anti-oxidation coating, adapting to high-temperature and high-humidity environments.
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